NTD5C632NLT4G
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
34 NC @ 4.5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds:
5700 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Supplier Device Package:
DPAK
Rds On (Max) @ Id, Vgs:
2.5mOhm @ 50A, 10V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
4W (Ta), 115W (Tc)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
29A (Ta), 155A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
NTD5C632NLT4G
Introduction
N-Channel 60 V 29A (Ta), 155A (Tc) 4W (Ta), 115W (Tc) Surface Mount DPAK
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