RJK5030DPP-M0#T2
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
13 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.6Ohm @ 2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
550 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220FL
Mfr:
Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C:
5A (Ta)
Power Dissipation (Max):
28.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RJK5030
Model Number:
RJK5030DPP-M0#T2
Introduction
N-Channel 500 V 5A (Ta) 28.5W (Tc) Through Hole TO-220FL
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