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SIHK155N60EF-T1GE3
manufacturer:
Vishay Siliconix
Description:
EF SERIES POWER MOSFET WITH FAST
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerBSFN
Gate Charge (Qg) (Max) @ Vgs:
38 NC @ 10 V
Rds On (Max) @ Id, Vgs:
52mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1465 PF @ 100 V
Mounting Type:
Surface Mount
Series:
EF
Supplier Device Package:
PowerPAK®10 X 12
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Power Dissipation (Max):
156W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHK155
Model Number:
SIHK155N60EF-T1GE3
Introduction
N-Channel 600 V 18A (Tc) 156W (Tc) Surface Mount PowerPAK®10 x 12
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