RJK0702DPN-E0#T2
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Obsolete
Mounting Type:
Through Hole
Package:
Tube
Vgs(th) (Max) @ Id:
-
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
89 NC @ 10 V
Supplier Device Package:
TO-220AB
Rds On (Max) @ Id, Vgs:
4.8mOhm @ 45A, 10V
Mfr:
Renesas Electronics America Inc
Operating Temperature:
150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
10 PF @ 10 V
Drain To Source Voltage (Vdss):
75 V
Power Dissipation (Max):
150W (Tc)
Package / Case:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
90A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
RJK0702DPN-E0#T2
Introduction
N-Channel 75 V 90A (Ta) 150W (Tc) Through Hole TO-220AB
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