english
SIHK125N60EF-T1GE3
manufacturer:
Vishay Siliconix
Description:
E SERIES POWER MOSFET WITH FAST
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
45 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
1863 PF @ 100 V
Series:
EF
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
5V @ 250µA
Supplier Device Package:
PowerPAK®10 X 12
Rds On (Max) @ Id, Vgs:
125mOhm @ 12A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
132W (Tc)
Package / Case:
8-PowerBSFN
Drain To Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SIHK125N60EF-T1GE3
Introduction
N-Channel 600 V 21A (Tc) 132W (Tc) Surface Mount PowerPAK®10 x 12
Send RFQ
Stock:
MOQ: