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NP100P06PLG-E1-AY
manufacturer:
Renesas Electronics America Inc
Description:
MOSFET P-CH 60V 100A TO263
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
300 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
15000 PF @ 10 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Supplier Device Package:
TO-263
Rds On (Max) @ Id, Vgs:
6mOhm @ 50A, 10V
Mfr:
Renesas Electronics America Inc
Operating Temperature:
175°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
1.8W (Ta), 200W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
NP100P06PLG-E1-AY
Introduction
P-Channel 60 V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263
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