NVMTS1D2N08H
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 590µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
147 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.1mOhm @ 90A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
10100 PF @ 40 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
8-DFNW (8.3x8.4)
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
43.5A (Ta), 337A (Tc)
Power Dissipation (Max):
5W (Ta), 300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVMTS1
Model Number:
NVMTS1D2N08H
Introduction
N-Channel 80 V 43.5A (Ta), 337A (Tc) 5W (Ta), 300W (Tc) Surface Mount 8-DFNW (8.3x8.4)
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