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IMBG65R163M1HXTMA1
manufacturer:
Infineon Technologies
Description:
SILICON CARBIDE MOSFET PG-TO263-
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.7V @ 1.7mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Gate Charge (Qg) (Max) @ Vgs:
10 NC @ 18 V
Rds On (Max) @ Id, Vgs:
217mOhm @ 5.7A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
+23V, -5V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
320 PF @ 400 V
Mounting Type:
Surface Mount
Series:
CoolSIC™ M1
Supplier Device Package:
PG-TO263-7-12
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Power Dissipation (Max):
85W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
IMBG65R
Model Number:
IMBG65R163M1HXTMA1
Introduction
N-Channel 650 V 17A (Tc) 85W (Tc) Surface Mount PG-TO263-7-12
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