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TSM060NB06CZ C0G
manufacturer:
Taiwan Semiconductor Corporation
Description:
60V, 111A, SINGLE N-CHANNEL POWE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
103 NC @ 10 V
Rds On (Max) @ Id, Vgs:
6mOhm @ 13A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7V, 10V
Package:
Tube
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
6842 PF @ 30 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Mfr:
Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C:
13A (Ta), 111A (Tc)
Power Dissipation (Max):
2W (Ta), 156W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TSM060
Model Number:
TSM060NB06CZ C0G
Introduction
N-Channel 60 V 13A (Ta), 111A (Tc) 2W (Ta), 156W (Tc) Through Hole TO-220
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