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NTE2946
manufacturer:
NTE Electronics, Inc
Description:
MOSFET-PWR N-CHAN ENHAN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
74 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bag
Input Capacitance (Ciss) (Max) @ Vds:
1510 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
TO-220 Full Pack
Rds On (Max) @ Id, Vgs:
850mOhm @ 4A, 10V
Mfr:
NTE Electronics, Inc
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
40W (Tc)
Package / Case:
TO-220-3 Full Pack
Drain To Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
4.6A
Technology:
MOSFET (Metal Oxide)
FET Feature:
Standard
Model Number:
NTE2946
Introduction
N-Channel 500 V 4.6A 40W (Tc) Through Hole TO-220 Full Pack
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