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SIHP050N60E-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 600V 51A TO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
130 NC @ 10 V
Rds On (Max) @ Id, Vgs:
50mOhm @ 23A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3459 PF @ 100 V
Mounting Type:
Through Hole
Series:
E
Supplier Device Package:
TO-220AB
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
51A (Tc)
Power Dissipation (Max):
278W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHP050
Model Number:
SIHP050N60E-GE3
Introduction
N-Channel 600 V 51A (Tc) 278W (Tc) Through Hole TO-220AB
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|---|---|---|---|
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|
IRLL1503TR |
MOSFET N-CH 30V SOT223
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IRFZ44RSTRR |
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IRF7822TRL |
MOSFET N-CH 30V 18A 8SO
|
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IRF7822TRR |
MOSFET N-CH 30V 18A 8SO
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IRF644NS |
MOSFET N-CH 250V 14A D2PAK
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|
IRFB13N50A |
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|
|
|
|
IRFP460P |
MOSFET N-CH 500V 20A TO247-3
|
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|
|
IRFB17N50L |
MOSFET N-CH 500V 16A TO220AB
|
|
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|
IRLZ44L |
MOSFET N-CH 60V 50A TO262-3
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IRLZ34L |
MOSFET N-CH 60V 30A TO262-3
|
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