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IPP60R065S7XKSA1
manufacturer:
Infineon Technologies
Description:
HIGH POWER_NEW PG-TO220-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 490µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
51 NC @ 12 V
Rds On (Max) @ Id, Vgs:
65mOhm @ 8A, 12V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
12V
Package:
Tube
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1932 PF @ 300 V
Mounting Type:
Through Hole
Series:
CoolMOS™ S7
Supplier Device Package:
PG-TO220-3-1
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Power Dissipation (Max):
167W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPP60R
Model Number:
IPP60R065S7XKSA1
Introduction
N-Channel 600 V 8A (Tc) 167W (Tc) Through Hole PG-TO220-3-1
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