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IPW65R080CFDFKSA2
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 650V 43.3A TO247-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 1.8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
167 NC @ 10 V
Rds On (Max) @ Id, Vgs:
80mOhm @ 17.6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5030 PF @ 100 V
Mounting Type:
Through Hole
Series:
CoolMOS™ CFD2
Supplier Device Package:
PG-TO247-3
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
43.3A (Tc)
Power Dissipation (Max):
391W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPW65R080
Model Number:
IPW65R080CFDFKSA2
Introduction
N-Channel 650 V 43.3A (Tc) 391W (Tc) Through Hole PG-TO247-3
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