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TK065Z65Z,S1F
manufacturer:
Toshiba Semiconductor and Storage
Description:
POWER MOSFET TRANSISTOR TO-247-4
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
62 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
3650 PF @ 300 V
Series:
DTMOSVI
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
4V @ 1.69mA
Supplier Device Package:
TO-247-4L(T)
Rds On (Max) @ Id, Vgs:
65mOhm @ 19A, 10V
Mfr:
Toshiba Semiconductor And Storage
Operating Temperature:
150°C
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
270W (Tc)
Package / Case:
TO-247-4
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
38A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
TK065Z65Z,S1F
Introduction
N-Channel 650 V 38A (Ta) 270W (Tc) Through Hole TO-247-4L(T)
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