IXFP34N65X3
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Vgs(th) (Max) @ Id:
5.2V @ 2.5mA
Series:
HiPerFET™, Ultra X3
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
29 NC @ 10 V
Supplier Device Package:
TO-220-3 (IXFP)
Rds On (Max) @ Id, Vgs:
100mOhm @ 17A, 10V
Mfr:
IXYS
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
2025 PF @ 25 V
Drain To Source Voltage (Vdss):
650 V
Power Dissipation (Max):
446W (Tc)
Package / Case:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
34A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFP34
Model Number:
IXFP34N65X3
Introduction
N-Channel 650 V 34A (Tc) 446W (Tc) Through Hole TO-220-3 (IXFP)
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