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IPP60R040S7XKSA1
manufacturer:
Infineon Technologies
Description:
HIGH POWER_NEW PG-TO220-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
83 NC @ 12 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
3127 PF @ 300 V
Series:
CoolMOS™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4.5V @ 790µA
Supplier Device Package:
PG-TO220-3
Rds On (Max) @ Id, Vgs:
40mOhm @ 13A, 12V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
12V
Power Dissipation (Max):
245W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
IPP60R040S7XKSA1
Introduction
N-Channel 600 V 13A (Tc) 245W (Tc) Through Hole PG-TO220-3
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