english
SCTH35N65G2V-7AG
manufacturer:
STMicroelectronics
Description:
SICFET N-CH 650V 45A H2PAK-7
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.2V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Gate Charge (Qg) (Max) @ Vgs:
73 NC @ 20 V
Rds On (Max) @ Id, Vgs:
67mOhm @ 20A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V, 20V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1370 PF @ 400 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
H2PAK-7
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Power Dissipation (Max):
208W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCTH35
Model Number:
SCTH35N65G2V-7AG
Introduction
N-Channel 650 V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7
Send RFQ
Stock:
MOQ: