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SIHG026N60EF-GE3
manufacturer:
Vishay Siliconix
Description:
EF SERIES POWER MOSFET WITH FAST
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
227 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
7926 PF @ 100 V
Series:
-
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
5V @ 250µA
Supplier Device Package:
TO-247AC
Rds On (Max) @ Id, Vgs:
26mOhm @ 38A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
521W (Tc)
Package / Case:
TO-247-3
Drain To Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
95A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SIHG026N60EF-GE3
Introduction
N-Channel 600 V 95A (Tc) 521W (Tc) Through Hole TO-247AC
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