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IMW120R040M1HXKSA1
manufacturer:
Infineon Technologies
Description:
SIC DISCRETE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
39 NC @ 18 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
1620 NF @ 25 V
Series:
CoolSiC™
Vgs (Max):
+20V, -5V
Vgs(th) (Max) @ Id:
5.2V @ 10mA
Supplier Device Package:
PG-TO247-3
Rds On (Max) @ Id, Vgs:
54.4mOhm @ 19.3A, 18V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Power Dissipation (Max):
227W (Tc)
Package / Case:
TO-247-3
Drain To Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Technology:
SiCFET (Silicon Carbide)
FET Feature:
-
Model Number:
IMW120R040M1HXKSA1
Introduction
N-Channel 1200 V 55A (Tc) 227W (Tc) Through Hole PG-TO247-3
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