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TW048N65C,S1F
manufacturer:
Toshiba Semiconductor and Storage
Description:
G3 650V SIC-MOSFET TO-247 48MOH
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
41 NC @ 18 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
1362 PF @ 400 V
Series:
-
Vgs (Max):
+25V, -10V
Vgs(th) (Max) @ Id:
5V @ 1.6mA
Supplier Device Package:
TO-247
Rds On (Max) @ Id, Vgs:
65mOhm @ 20A, 18V
Mfr:
Toshiba Semiconductor And Storage
Operating Temperature:
175°C
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Power Dissipation (Max):
132W (Tc)
Package / Case:
TO-247-3
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Technology:
SiCFET (Silicon Carbide)
FET Feature:
-
Model Number:
TW048N65C,S1F
Introduction
N-Channel 650 V 40A (Tc) 132W (Tc) Through Hole TO-247
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