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IXTH1N170DHV
manufacturer:
IXYS
Description:
MOSFET N-CH 1700V 1A TO247HV
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
Depletion Mode
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs:
47 NC @ 5 V
Rds On (Max) @ Id, Vgs:
16Ohm @ 500mA, 0V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
0V
Package:
Tube
Drain To Source Voltage (Vdss):
1700 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3090 PF @ 25 V
Mounting Type:
Through Hole
Series:
Depletion
Supplier Device Package:
TO-247HV
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
1A (Tj)
Power Dissipation (Max):
290W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTH1
Model Number:
IXTH1N170DHV
Introduction
N-Channel 1700 V 1A (Tj) 290W (Tc) Through Hole TO-247HV
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