MSC017SMA120J
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
249 NC @ 20 V
Product Status:
Active
Vgs(th) (Max) @ Id:
2.7V @ 4.5mA (Typ)
Input Capacitance (Ciss) (Max) @ Vds:
5280 PF @ 1000 V
Series:
-
Vgs (Max):
+23V, -10V
Package:
Bulk
Mfr:
Microchip Technology
Rds On (Max) @ Id, Vgs:
22mOhm @ 40A, 20V
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Power Dissipation (Max):
278W (Tc)
Drain To Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
88A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
MSC017
Model Number:
MSC017SMA120J
Introduction
N-Channel 1200 V 88A (Tc) 278W (Tc)
Send RFQ
Stock:
MOQ:

