NVBG022N120M3S
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
148 NC @ 18 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
3200 PF @ 800 V
Series:
Automotive, AEC-Q101
Vgs(th) (Max) @ Id:
4.4V @ 20mA
Supplier Device Package:
D2PAK-7
Rds On (Max) @ Id, Vgs:
30mOhm @ 40A, 18V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Power Dissipation (Max):
234W (Tc)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Drain To Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
58A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
NVBG022
Model Number:
NVBG022N120M3S
Introduction
N-Channel 1200 V 58A (Tc) 234W (Tc) Surface Mount D2PAK-7
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