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BSM600C12P3G201
manufacturer:
Rohm Semiconductor
Description:
SICFET N-CH 1200V 600A MODULE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Active
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
5.6V @ 182mA
Input Capacitance (Ciss) (Max) @ Vds:
28000 PF @ 10 V
Series:
-
Vgs (Max):
+22V, -4V
Package:
Tray
Supplier Device Package:
Module
Rds On (Max) @ Id, Vgs:
-
Mfr:
Rohm Semiconductor
Operating Temperature:
175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
-
Power Dissipation (Max):
2460W (Tc)
Package / Case:
Module
Drain To Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
600A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
BSM600
Model Number:
BSM600C12P3G201
Introduction
N-Channel 1200 V 600A (Tc) 2460W (Tc) Chassis Mount Module
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