english
STY112N65M5
manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 650V 96A MAX247
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
350 NC @ 10 V
Rds On (Max) @ Id, Vgs:
22mOhm @ 47A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
16870 PF @ 100 V
Mounting Type:
Through Hole
Series:
MDmesh™ V
Supplier Device Package:
MAX247™
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
96A (Tc)
Power Dissipation (Max):
625W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STY112
Model Number:
STY112N65M5
Introduction
N-Channel 650 V 96A (Tc) 625W (Tc) Through Hole MAX247™
Send RFQ
Stock:
MOQ: