english
IXTZ550N055T2
manufacturer:
IXYS
Description:
MOSFET N-CH 55V 550A DE475
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
6-SMD, Flat Leads
Gate Charge (Qg) (Max) @ Vgs:
595 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
55 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
40000 PF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchT2™
Supplier Device Package:
DE475
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
550A (Tc)
Power Dissipation (Max):
600W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTZ550
Model Number:
IXTZ550N055T2
Introduction
N-Channel 55 V 550A (Tc) 600W (Tc) Surface Mount DE475
Send RFQ
Stock:
MOQ: