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SCT3017ALGC11
manufacturer:
Rohm Semiconductor
Description:
650V, 118A, THD, TRENCH-STRUCTUR
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.6V @ 23.5mA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
172 NC @ 18 V
Rds On (Max) @ Id, Vgs:
22.1mOhm @ 47A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Package:
Tube
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -4V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2884 PF @ 500 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247N
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
118A (Tc)
Power Dissipation (Max):
427W
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCT3017
Model Number:
SCT3017ALGC11
Introduction
N-Channel 650 V 118A (Tc) 427W Through Hole TO-247N
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