SI2310AHE3-TP
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
10.27 NC @ 10 V
Rds On (Max) @ Id, Vgs:
100mOhm @ 3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
409 PF @ 10 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
SOT-23
Mfr:
Micro Commercial Co
Current - Continuous Drain (Id) @ 25°C:
3A
Power Dissipation (Max):
1.2W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI2310
Model Number:
SI2310AHE3-TP
Introduction
N-Channel 60 V 3A 1.2W Surface Mount SOT-23
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