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PJQ1917_R1_00001
manufacturer:
Panjit International Inc.
Description:
20V P-CHANNEL ENHANCEMENT MODE M
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-UFDFN
Gate Charge (Qg) (Max) @ Vgs:
1.1 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
600mOhm @ 300mA, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
51 PF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1006-3
Mfr:
Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C:
700mA (Ta)
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PJQ1917
Model Number:
PJQ1917_R1_00001
Introduction
P-Channel 20 V 700mA (Ta) 500mW (Ta) Surface Mount DFN1006-3
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