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DMN2029UVT-7
manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 6.8A TSOT26
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs:
7.1 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
24mOhm @ 6.2A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
646 PF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TSOT-26
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
6.8A (Ta)
Power Dissipation (Max):
700mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMN2029
Model Number:
DMN2029UVT-7
Introduction
N-Channel 20 V 6.8A (Ta) 700mW (Ta) Surface Mount TSOT-26
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