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DMN13H750S-13
manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 130V 1A SOT23
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
5.6 NC @ 10 V
Rds On (Max) @ Id, Vgs:
750mOhm @ 2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
130 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
231 PF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
1A (Ta)
Power Dissipation (Max):
770mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMN13
Model Number:
DMN13H750S-13
Introduction
N-Channel 130 V 1A (Ta) 770mW (Ta) Surface Mount SOT-23-3
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