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PJQ4416EP_R2_00001
manufacturer:
Panjit International Inc.
Description:
20V N-CHANNEL ENHANCEMENT MODE M
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
16 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
11mOhm @ 10A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±10V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
1117 PF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN3333-8
Mfr:
Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C:
11A (Ta), 30A (Tc)
Power Dissipation (Max):
2W (Ta), 26W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PJQ4416
Model Number:
PJQ4416EP_R2_00001
Introduction
N-Channel 20 V 11A (Ta), 30A (Tc) 2W (Ta), 26W (Tc) Surface Mount DFN3333-8
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