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SIRA18DP-T1-RE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 30V 33A PPAK SO-8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
21.5 NC @ 10 V
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
+20V, -16V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1000 PF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Power Dissipation (Max):
14.7W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIRA18
Model Number:
SIRA18DP-T1-RE3
Introduction
N-Channel 30 V 33A (Tc) 14.7W (Tc) Surface Mount PowerPAK® SO-8
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IRFP460P |
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