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Home > Products > > SISA16DN-T1-GE3

SISA16DN-T1-GE3

manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 30V 16A PPAK1212-8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Series:
TrenchFET®
Gate Charge (Qg) (Max) @ Vgs:
47 NC @ 10 V
Supplier Device Package:
PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs:
6.8mOhm @ 15A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
2060 PF @ 15 V
Drain To Source Voltage (Vdss):
30 V
Power Dissipation (Max):
-
Package / Case:
PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C:
16A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISA16
Model Number:
SISA16DN-T1-GE3
Introduction
N-Channel 30 V 16A (Ta) Surface Mount PowerPAK® 1212-8
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