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DMT5012LFVW-7
manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 41V~60V POWERDI333
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
17.6 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount, Wettable Flank
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
738 PF @ 30 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Supplier Device Package:
PowerDI3333-8 (SWP) Type UX
Rds On (Max) @ Id, Vgs:
13mOhm @ 10A, 10V
Mfr:
Diodes Incorporated
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
2.7W (Ta), 51.4W (Tc)
Package / Case:
8-PowerVDFN
Drain To Source Voltage (Vdss):
50 V
Current - Continuous Drain (Id) @ 25°C:
11.7A (Ta), 51.4A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
DMT5012LFVW-7
Introduction
N-Channel 50 V 11.7A (Ta), 51.4A (Tc) 2.7W (Ta), 51.4W (Tc) Surface Mount, Wettable Flank PowerDI3333-8 (SWP) Type UX
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