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Home > Products > > SI8497DB-T2-E1

SI8497DB-T2-E1

manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 30V 13A 6MICROFOOT
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UFBGA
Gate Charge (Qg) (Max) @ Vgs:
49 NC @ 10 V
Rds On (Max) @ Id, Vgs:
53mOhm @ 1.5A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2V, 4.5V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1320 PF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
6-microfoot
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Power Dissipation (Max):
2.77W (Ta), 13W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI8497
Model Number:
SI8497DB-T2-E1
Introduction
P-Channel 30 V 13A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-microfoot
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