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SI3442BDV-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 20V 3A 6TSOP
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs:
5 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
57mOhm @ 4A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
295 PF @ 10 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
6-TSOP
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Power Dissipation (Max):
860mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI3442
Model Number:
SI3442BDV-T1-GE3
Introduction
N-Channel 20 V 3A (Ta) 860mW (Ta) Surface Mount 6-TSOP
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IRFP460P |
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IRFB17N50L |
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