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PJD4NA65H_L2_00001
manufacturer:
Panjit International Inc.
Description:
650V N-CHANNEL MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
16.1 NC @ 10 V
Rds On (Max) @ Id, Vgs:
3.75Ohm @ 1.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
423 PF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252
Mfr:
Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Power Dissipation (Max):
34W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PJD4NA65
Model Number:
PJD4NA65H_L2_00001
Introduction
N-Channel 650 V 3A (Ta) 34W (Tc) Surface Mount TO-252
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