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PJD80N03_L2_00001
manufacturer:
Panjit International Inc.
Description:
30V N-CHANNEL ENHANCEMENT MODE M
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
12 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
6mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1323 PF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252
Mfr:
Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C:
15A (Ta), 80A (Tc)
Power Dissipation (Max):
2W (Ta), 55W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PJD80
Model Number:
PJD80N03_L2_00001
Introduction
N-Channel 30 V 15A (Ta), 80A (Tc) 2W (Ta), 55W (Tc) Surface Mount TO-252
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