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DMT6012LFV-7
manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 60V 43.3A PWRDI3333
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
22.2 NC @ 10 V
Rds On (Max) @ Id, Vgs:
12mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1522 PF @ 30 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
PowerDI3333-8 (Type UX)
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
43.3A (Tc)
Power Dissipation (Max):
1.95W (Ta), 33.78W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMT6012
Model Number:
DMT6012LFV-7
Introduction
N-Channel 60 V 43.3A (Tc) 1.95W (Ta), 33.78W (Tc) Surface Mount PowerDI3333-8 (Type UX)
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