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SIA436DJ-T4-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 8V 12A PPAK SC70-6
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
800mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SC-70-6
Gate Charge (Qg) (Max) @ Vgs:
25.2 NC @ 5 V
Rds On (Max) @ Id, Vgs:
9.4mOhm @ 15.7A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
8 V
Vgs (Max):
±5V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1508 PF @ 4 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SC-70-6
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Power Dissipation (Max):
3.5W (Ta), 19W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIA436
Model Number:
SIA436DJ-T4-GE3
Introduction
N-Channel 8 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
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IRFP460P |
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