US5U2TR
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
Schottky Diode (Isolated)
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
6-SMD (5 Leads), Flat Lead
Gate Charge (Qg) (Max) @ Vgs:
2 NC @ 5 V
Rds On (Max) @ Id, Vgs:
240mOhm @ 1.4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
70 PF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TUMT5
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
1.4A (Ta)
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
US5U2
Model Number:
US5U2TR
Introduction
N-Channel 30 V 1.4A (Ta) 1W (Ta) Surface Mount TUMT5
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