QS5U21TR
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
Schottky Diode (Isolated)
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-23-5 Thin, TSOT-23-5
Gate Charge (Qg) (Max) @ Vgs:
4.2 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
200mOhm @ 1.5A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
325 PF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TSMT5
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
1.5A (Ta)
Power Dissipation (Max):
1.25W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
QS5U21
Model Number:
QS5U21TR
Introduction
P-Channel 20 V 1.5A (Ta) 1.25W (Ta) Surface Mount TSMT5
Send RFQ
Stock:
MOQ:

