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DMTH69M8LFVWQ-13
manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 41V-60V POWERDI333
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
33.5 NC @ 10 V
Rds On (Max) @ Id, Vgs:
9.5mOhm @ 13.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±16V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1925 PF @ 30 V
Mounting Type:
Surface Mount, Wettable Flank
Series:
Automotive, AEC-Q101
Supplier Device Package:
PowerDI3333-8 (SWP) Type UX
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
15.9A (Ta), 45.4A (Tc)
Power Dissipation (Max):
3.6W (Ta), 29.4W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMTH69
Model Number:
DMTH69M8LFVWQ-13
Introduction
N-Channel 60 V 15.9A (Ta), 45.4A (Tc) 3.6W (Ta), 29.4W (Tc) Surface Mount, Wettable Flank PowerDI3333-8 (SWP) Type UX
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