PJF4NA50A_T0_00001
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
9.8 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.3Ohm @ 2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
449 PF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
ITO-220AB
Mfr:
Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Power Dissipation (Max):
42W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PJF4NA50
Model Number:
PJF4NA50A_T0_00001
Introduction
N-Channel 500 V 4A (Ta) 42W (Tc) Through Hole ITO-220AB
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