NTTFS6H880NTAG
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
6.9 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
370 PF @ 40 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 20µA
Supplier Device Package:
8-WDFN (3.3x3.3)
Rds On (Max) @ Id, Vgs:
32mOhm @ 5A, 10V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
3.1W (Ta), 31W (Tc)
Package / Case:
8-PowerWDFN
Drain To Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
6.3A (Ta), 21A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
NTTFS6H880NTAG
Introduction
N-Channel 80 V 6.3A (Ta), 21A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount 8-WDFN (3.3x3.3)
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