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SIS698DN-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 100V 6.9A PPAK1212-8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs:
8 NC @ 10 V
Rds On (Max) @ Id, Vgs:
195mOhm @ 2.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
210 PF @ 50 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
PowerPAK® 1212-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
6.9A (Tc)
Power Dissipation (Max):
19.8W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIS698
Model Number:
SIS698DN-T1-GE3
Introduction
N-Channel 100 V 6.9A (Tc) 19.8W (Tc) Surface Mount PowerPAK® 1212-8
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IRFP460P |
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