TT8U1TR
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
Schottky Diode (Isolated)
Vgs(th) (Max) @ Id:
1V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-SMD, Flat Lead
Gate Charge (Qg) (Max) @ Vgs:
6.7 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
105mOhm @ 2.4A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±10V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
850 PF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-TSST
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
2.4A (Ta)
Power Dissipation (Max):
1.25W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TT8U1
Model Number:
TT8U1TR
Introduction
P-Channel 20 V 2.4A (Ta) 1.25W (Ta) Surface Mount 8-TSST
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