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DMT12H065LFDF-13
manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 115V 4.3A 6UDFN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
5.5 NC @ 10 V
Rds On (Max) @ Id, Vgs:
65mOhm @ 3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
3V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
115 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
252 PF @ 50 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
U-DFN2020-6 (Type F)
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
4.3A (Ta)
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMT12
Model Number:
DMT12H065LFDF-13
Introduction
N-Channel 115 V 4.3A (Ta) 1W (Ta) Surface Mount U-DFN2020-6 (Type F)
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