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DMT6006LK3-13
manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 41V~60V TO252 T&R
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
34.9 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
2162 PF @ 30 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
TO-252, (D-Pak)
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 20A, 10V
Mfr:
Diodes Incorporated
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
3.1W (Ta), 89.3W (Tc)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
88A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
DMT6006LK3-13
Introduction
N-Channel 60 V 88A (Tc) 3.1W (Ta), 89.3W (Tc) Surface Mount TO-252, (D-Pak)
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